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Whole catalog
↠ Active ingredients
↠ Transistors, modules
↠ Field effect transistors
Transistor IPP120N20NFD N-ch 200V 84A 12mΩ
from 1 pc :
—
240,00
UAH
from 10 pcs :
—
216,00
UAH
( -10,0%)
from 50 pcs :
—
204,00
UAH
( -15,0%)
Магазин-Днепр
100 pcs
For Online Orders
100 pcs
Производитель
INFINEON TECHNOLOGIES AG (INFINEON)
Корпус
TO220
Структура
N
Схема соединения
Одиночный
V(BR)DSS - напряжение пробоя сток-исток
200 V
Vgs - напряжение затвор-исток
±20 V
Id25 - постоянный ток стока при 25°C
84 А
Id75(100) - постоянный ток стока при 75(100)°C
60 А
Rds(on)25 - сопротивление сток-исток при 25°C,Vgs=10V
10.6 мОм
VGS(th) - пороговое напряжение затвор-исток (типовое)
3 V
VGS(th) - пороговое напряжение затвор-исток (диапазон)
2 ... 4 V
Мощность рассеяния при 25°C
300 Вт
Тип упаковки
Туба
Стандартная упаковка
50 шт
The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
To carry out technical calculations and obtain the exact parameters of the goods, use the datasheets from the manufacturer's website.
If you need additional information, or you found an error in the description, or have other questions about this product, then our manager will help you: Евгений ЗП
unknown
contacts
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